Fig. 2From: Study on the Multi-level Resistance-Switching Memory and Memory-State-Dependent Photovoltage in Pt/Nd:SrTiO3 JunctionsThe I–V characteristics of a the In/Nd:STO/In and b Pt/Nd:STO/In devices in the voltage range from 0 V → 5 V → 0 V → − 5 V → 0 V with 50-mA compliance current. The inset shows the device schematic illustrationBack to article page