Fig. 4From: Study on the Multi-level Resistance-Switching Memory and Memory-State-Dependent Photovoltage in Pt/Nd:SrTiO3 JunctionsThe I–V curves in the low-bias regime (− 0.6 to + 0.6 V) after switching with a series of voltage pulses from + 1 to + 5 V with 100 ms (switching from LRS to intermediate resistance states and to HRS) under a the light illumination and b dark, respectivelyBack to article page