Fig. 3From: Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substratesHAADF-STEM and EDX characterization of the SrGe2 thin film grown on the Ge (110) substrate at 500 °C. a HAADF-STEM image. b EDX elemental map from the region shown in panel a. c Magnified HAADF-STEM image. d Elemental composition profile obtained by a STEM-EDX line scan measurement along the arrow in panel (c)Back to article page