Table 1 Temperature dependence of Raman frequency of E2ghigh peak and G peak are fitted by ωph = ωph0 + at+bt2, and the constants of ωph0, a, and b are given in the table
From: Temperature Dependence of Raman-Active In-Plane E2g Phonons in Layered Graphene and h-BN Flakes
Flake | Phonon | Thickness | ωph0 | a | b |
|---|---|---|---|---|---|
h-BNs | E2ghigh | 16.2 nm | 1363 cm−1 | − 0.04123 cm−1 °C | − 8.446 × 10−5 cm−1 °C2 |
E2ghigh | 36.2 nm | 1363 cm−1 | − 0.02385 cm−1 °C | − 2.501 × 10−5 cm−1 °C2 | |
Graphenes | G | 16.5 nm | 1579 cm−1 | − 0.02519 cm−1 °C | − 5.187 × 10−6 cm−1 °C2 |
G | 35.6 nm | 1579 cm−1 | − 0.01745 cm−1 °C | − 7.145 × 10−6 cm−1 °C2 |