Fig. 3From: Polarization-Insensitive Surface Plasmon Polarization Electro-Absorption Modulator Based on Epsilon-Near-Zero Indium Tin OxideElectric field profiles Ex and Ey of the modulator for a–b “ON” state, NITO = 1.6 × 1019 cm−3, and c–d “OFF” state, NITO = 5.6× 1020 cm−3, respectively. a and c are for TE mode. b and d are for TM mode. The inserts show the zoomed in electric field density in ITO layer for the “OFF” state. WSi = 310 nm, HSi = 340 nm, Hp = 20 nm, Wp = 25 nmBack to article page