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Fig. 5 | Nanoscale Research Letters

Fig. 5

From: Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer

Fig. 5

a Schematic of the fabricated LED device. b Optical photograph of the nanowires on quartz LED under forward bias. cL-I-V characteristic of the LED. d Electroluminescence spectra of the LED under varying injection current. e Change of FWHM and peak wavelength position of the LED with increasing forward bias. f Relative external quantum efficiency of the LED, showing efficiency droop at higher injection current due to current crowding and junction heating

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