Fig. 5From: Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayera Schematic of the fabricated LED device. b Optical photograph of the nanowires on quartz LED under forward bias. cL-I-V characteristic of the LED. d Electroluminescence spectra of the LED under varying injection current. e Change of FWHM and peak wavelength position of the LED with increasing forward bias. f Relative external quantum efficiency of the LED, showing efficiency droop at higher injection current due to current crowding and junction heatingBack to article page