Fig. 6From: Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti InterlayerDevice temperature measurement using the OptoTherm infrared camera. a Change of device temperature with increasing injection current. Inset shows infrared image of the device structure under zero bias and adjusted color bar. The measurement point is indicated by the number 2 and the purple cross. Infrared image corresponding to the temperature of the device and surrounding area at injection current of b 5, c 10, d 20, and e 30 mA. The results indicate that heat is concentrated in the area around the deviceBack to article page