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Retraction Note: Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure

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The original article was published in Nanoscale Research Letters 2016 11:462

Retraction Note

The Editor has retracted this article [1] due to significant overlap in text and figures with a previous article published in another journal [2]. The authors do not agree with the retraction.

[1] Huang Z-M et al. (2016) Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure. Nanoscale Res. Lett. 11:462; first published 18 October 2016.

[2] Huang Z-M et al. (2017) Enhanced emission in the three-level system of Si and Ge nanostructures. Optics Commun. 383:1-5; first published 30 August 2016.

References

  1. 1.

    Huang Z-M et al (2016) Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure. Nanoscale Res Lett 11:462 https://doi.org/10.1186/s11671-016-1682-4

  2. 2.

    Huang Z-M et al (2017) Enhanced emission in the three-level system of Si and Ge nanostructures. Optics Commun 383:1–5

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Author information

Correspondence to Wei-Qi Huang.

Additional information

The online version of the original article can be found under doi:https://doi.org/10.1186/s11671-018-2454-0

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Open Access This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

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Huang, Z., Huang, W., Dong, T. et al. Retraction Note: Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure. Nanoscale Res Lett 13, 46 (2018) doi:10.1186/s11671-018-2454-0

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