Fig. 1
From: Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE
FESEM images of samples grown at different conditions. a, b Corresponding to the GaN nanocolumns (sample S1). c, d Corresponding to the GaN nanowall network (sample S2), e Corresponding to the compact film (sample S3), f Corresponding to the GaN nanowall network (sample S4) at the beginning growth stage. g, h Corresponding to the GaN nanowall network grown at lower temperature 900 K (sample S5)