Table 1 Summarization of samples studied in this work
From: Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE
Sample | Structure | φGa (Torr) | Pre-deposition | Growth temperature (K) | Growth time (min) |
|---|---|---|---|---|---|
S1 | Nanocolumn | 1.2 × 10−7 | Without | 973 | 120 |
S2 | Nanowall network | 1.2 × 10−7 | With | 973 | 120 |
S3 | Compact film | 5.3 × 10−7 | With | 973 | 120 |
S4 | Nanowall network | 1.2 × 10−7 | With | 973 | 20 |
S5 | Nanowall network | 1.2 × 10−7 | With | 900 | 120 |