Table 3 Performance properties of various TFET DRAM utilized as DRAM

FD-SOI TFET with intrinsic region [17]

L_g 400 nm; Intrinsic Region Length (L_in) 200 nm

1.2 μA/μm

DG FD-SOI TFET [18]

L_g1 400 nm; L_g2 200 nm; L_in 200 nm

100 μs~#ms

50 nA/μm

DGTFET with front gate [19]

L_g1 400 nm; L_g2 200 nm; L_gap 200 nm

1.5 s

0.1 nA/μm

DGTFET with back gate [20]

L_{front gate} 400 nm; L_{back gate} 200 nm

170 ms

0.1 nA/μm

Prsent work

L_g1 400 nm; L_g2 200 nm; L_gap 50 nm

10 s

14fA/μm