Fig. 1From: Photoconductivity, pH Sensitivity, Noise, and Channel Length Effects in Si Nanowire FET SensorsSi nanowire field-effect transistor structures under study. Schematic picture of the samples under study: pH—sensor operating mode (a) and photo-receiver operating mode (b). PI polyimide layer, S source, D drain, FG front gate (reference electrode, RE), BG back gateBack to article page