Fig. 7From: Photoconductivity, pH Sensitivity, Noise, and Channel Length Effects in Si Nanowire FET SensorsNoise spectra of NW FET, measured at optical excitation. Spectral dependence of LF noise, measured for NW FET sample with l = 10 μm under illuminations: 0.85 W/cm2, 1.6 W/cm2, and in the dark; VBG = − 1 V, T = 300 KBack to article page