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Table 1 Comparison of box resistance in P-N injection and PECVD effect between inverted and upright pyramid structures

From: Fabrication of 20.19% Efficient Single-Crystalline Silicon Solar Cell with Inverted Pyramid Microstructure

 

Box resistance in P-N injection

PECVD

Average/Ω

STD

Thickness of SiNx film/nm

Refractive index

Inverted pyramid sc-Si

80.44

4.36

73.05

2.00

Upright pyramid sc-Si

80.32

4.48

83.75

1.96

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