Table 1 Key simulation parameters
From: Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions
Parameters | Values (GaAs) | Values (AlGaAs) |
---|---|---|
Electron and hole mobility | Doping dependent | Doping dependent |
Bandgap | 1.43 eV | 2.1 eV |
Electron relative effective mass | 0.067m0 | 0.115m0 |
Hole relative effective mass | 0.485m0 | 0.598m0 |
Thermionic current coefficients | 2 | 2 |
SRH lifetimes for electrons and holes | 1 ns | 1 ns |
Radiative recombination coefficient | 7.2 × 10−10 cm3/s | 7.2 × 10−10 cm3/s |
Auger recombination coefficient | 1 × 10−30 cm6/s | 1 × 10−30 cm6/s |
Surface recombination velocity | 103 cm/s or 107 cm/s | 103 cm/s or 107 cm/s |
Recombination velocity at contacts | 107 cm/s | 107 cm/s |
Conduction band offset at GaAs/Al0.8Ga0.2As interface | 0.315 eV | |
Valence band offset at GaAs/Al0.8Ga0.2As interface | 0.31 eV |