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Table 1 Key simulation parameters

From: Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions

Parameters

Values (GaAs)

Values (AlGaAs)

Electron and hole mobility

Doping dependent

Doping dependent

Bandgap

1.43 eV

2.1 eV

Electron relative effective mass

0.067m0

0.115m0

Hole relative effective mass

0.485m0

0.598m0

Thermionic current coefficients

2

2

SRH lifetimes for electrons and holes

1 ns

1 ns

Radiative recombination coefficient

7.2 × 10−10 cm3/s

7.2 × 10−10 cm3/s

Auger recombination coefficient

1 × 10−30 cm6/s

1 × 10−30 cm6/s

Surface recombination velocity

103 cm/s or 107 cm/s

103 cm/s or 107 cm/s

Recombination velocity at contacts

107 cm/s

107 cm/s

Conduction band offset at GaAs/Al0.8Ga0.2As interface

0.315 eV

Valence band offset at GaAs/Al0.8Ga0.2As interface

0.31 eV

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