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Table 1 Key simulation parameters

From: Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions

Parameters Values (GaAs) Values (AlGaAs)
Electron and hole mobility Doping dependent Doping dependent
Bandgap 1.43 eV 2.1 eV
Electron relative effective mass 0.067m0 0.115m0
Hole relative effective mass 0.485m0 0.598m0
Thermionic current coefficients 2 2
SRH lifetimes for electrons and holes 1 ns 1 ns
Radiative recombination coefficient 7.2 × 10−10 cm3/s 7.2 × 10−10 cm3/s
Auger recombination coefficient 1 × 10−30 cm6/s 1 × 10−30 cm6/s
Surface recombination velocity 103 cm/s or 107 cm/s 103 cm/s or 107 cm/s
Recombination velocity at contacts 107 cm/s 107 cm/s
Conduction band offset at GaAs/Al0.8Ga0.2As interface 0.315 eV
Valence band offset at GaAs/Al0.8Ga0.2As interface 0.31 eV