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Table 1 Comparison of ferroelectric-based FETs with different CNT

From: Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer

FeFET structure Arrays SWCNT/BNT/HfO2
[this work]
Arrays SWCNT/BNT
[this work]
Single SWCNT/BTO
Ref. [6]
Arrays MWCNT/BNT
Ref. [8]
Networked SWCNT/PVD
Ref. [3]
Fabrication method Evaporation/sol-gel/sol-gel Evaporation/sol-gel PECVD/PLD Evaporation/sol-gel Dispersion/spin-coated
Channel length (μm) 200 200 0.6 200 100
Operating voltage (V) 2 4 1 4 30
“On” current 3.8 × 10−2 3.6 × 10−2 7 × 10−7 1.5 × 10−2 10−6
Vth (V) 0.2 0.8 2.5 1.6 15
μsat(cm2/V-s) 395 300 260 94.47
MW (cm) 4.2 (logarithmic) 4.1 (logarithmic) 4 (logarithmic) 4.38 (linear)
On/off current ratio 2 × 105 2 × 104 103 103 104
Fatigue characteristics (1011) Less 3% 10% 25% [this work]
Data retention (106s) 3 × 104 7 × 103 7 × 102 6 × 102 [this work]