Table 1 Comparison of ferroelectric-based FETs with different CNT
FeFET structure | Arrays SWCNT/BNT/HfO2 [this work] | Arrays SWCNT/BNT [this work] | Single SWCNT/BTO Ref. [6] | Arrays MWCNT/BNT Ref. [8] | Networked SWCNT/PVD Ref. [3] |
|---|---|---|---|---|---|
Fabrication method | Evaporation/sol-gel/sol-gel | Evaporation/sol-gel | PECVD/PLD | Evaporation/sol-gel | Dispersion/spin-coated |
Channel length (μm) | 200 | 200 | 0.6 | 200 | 100 |
Operating voltage (V) | 2 | 4 | 1 | 4 | 30 |
“On” current | 3.8 × 10−2 | 3.6 × 10−2 | 7 × 10−7 | 1.5 × 10−2 | 10−6 |
Vth (V) | 0.2 | 0.8 | 2.5 | 1.6 | 15 |
μsat(cm2/V-s) | 395 | 300 | 260 | 94.47 | – |
MW (cm) | 4.2 (logarithmic) | 4.1 (logarithmic) | 4 (logarithmic) | 4.38 (linear) | – |
On/off current ratio | 2 × 105 | 2 × 104 | 103 | 103 | 104 |
Fatigue characteristics (1011) | Less 3% | 10% | – | 25% [this work] | – |
Data retention (106s) | 3 × 104 | 7 × 103 | 7 × 102 | 6 × 102 [this work] | – |