Fig. 8From: Low-Temperature Reduction of Graphene Oxide: Electrical Conductance and Scanning Kelvin Probe Force MicroscopySKPFM maps of the contact potential difference between PtIr tip and GO flake on Ni substrate: initial (a) and after annealing for 15 min at 80, 100, 120, 140, and 180 °C (b–f), correspondingly. Ni substrate used for reference in the SKPFM measurementsBack to article page