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Fig. 3 | Nanoscale Research Letters

Fig. 3

From: Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

Fig. 3

Numerically calculated hole concentration profiles a in the MQWs and b in the p-type hole injection layers for LEDs A and B, respectively; c experimentally measured EL spectra in semi-log scale at the current density of 10, 30, 50, and 70 A/cm2 for LEDs A and B, respectively; d numerically calculated electron concentration levels in the p-type hole injection layers for LEDs A and B. Numerically calculated data are collected at the current density of 50 A/cm2

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