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Fig. 5 | Nanoscale Research Letters

Fig. 5

From: Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

Fig. 5

Numerically computed energy band profiles in the vicinity of a bulk AlGaN-based p-EBL for LED A, b superlattice p-EBL for LED B, and c measured current density in terms of the applied bias for LEDs A and B. Data for a and b are calculated at the current density of 50 A/cm2. E C , EV, Ø e , and Ø h denote the conduction band, the valence band, and the effective barrier heights for conduction band and valence band, respectively

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