Table 2 The calculated threshold displacement energies and associated defects after the recoil events in Si/Ge superlattice. V X : X vacancy (X = Si or Ge); Xint: X interstitial (X = Si or Ge); X Y : X occupying the Y lattice site (X and Y = Si or Ge)
Si recoils | Ge recoils | |||
|---|---|---|---|---|
Direction | Ed (eV) | Defect type | Ed (eV) | Defect type |
[001] | 46.5 | VSi + SiGe + GeSi + SiGe + Geint | 16 | SiGe + GeSi |
\( \left[00\overline{1}\right] \) | 42.5 | VSi + SiGe + GeSi + Siint + Geint + VGe | 17.5 | VGe + GeSi + Siint |
[110] | 38.5 | VSi + SiGe + Geint | 20 | VGe + GeSi + Siint |
[111] | > 100 | – | 10 | VGe + Geint |
\( \left[\overline{1}\overline{1}\overline{1}\right] \) | 10 | VSi + Siint | 13.5 | VGe + Geint |