A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low-Energy Irradiation

Table 3 The defect formation energies in bulk Si, Ge, and Si/Ge superlattice. V_X: X vacancy (X = Si or Ge); X_int: X interstitial (X = Si or Ge); FP defect: Frenkel pair defect

Defect type	Defect formation energies (eV)
	Si/Ge SL	Bulk Ge	Bulk Si
V_Si	2.85	–	3.60, 3.61^a, 3.56^b
V_Ge	2.73	2.23, 2.09^a	–
Si_int	3.77	–	3.77, 3.75^c,3.29^d
Ge_int	3.52	2.97, 2.92^e	–
Si FP	5.19	–	4.62, 4.26^b
Ge FP	5.01	4.15	–