Account

Table 4 The defect migration barrier in bulk Si, Ge, and Si/Ge superlattice. V_X: X vacancy (X = Si or Ge)

From: A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low-Energy Irradiation

Defect type	Direction	Migration barrier (eV)
		Si/Ge SL	Bulk Ge	Bulk Si
V_Si	[100]	3.92	–	4.32
	[110]	2.14	–	2.12, 2.85^a
	[111]	0.49	–	0.11
V_Ge	[100]	2.87	3.67	–
	[110]	1.39	1.94, 2.1^a	–
	[111]	0.61	0.14	–

^aRef. [41]

Back to article page