Fig. 10

a Photocurrent and dark current with different doping level (thickness of charge layer is 210 nm). Solid line: doping level in the charge layer is 1.3 × 10¹⁷ cm⁻³. Dashed line: doping level in charge layer is 1.15 × 10¹⁷ cm⁻³. Dashed dot line: doping level in charge layer is 1.0 × 10¹⁷ cm⁻³. a Presents the simulation results of currents with different doping level. The device with a charge layer thickness of 210 nm only has a relatively narrow and suitable doping level. A minimal change in the doping level has greatly influence the punch-through voltage, breakdown voltage, and current-voltage characteristic. b Avalanche field with different doping level (thickness of charge layer is 210 nm). Solid line: doping level in charge layer is 1.3 × 10¹⁷ cm⁻³. Dashed line: doping level in charge layer is 1.15 × 10¹⁷ cm⁻³. Dashed dot line: doping level in charge layer is 1.0 × 10¹⁷ cm⁻³. b Presents the simulation results of fields with different doping level. The device with a charge layer thickness of 210 nm only has a relatively narrow and suitable doping level. A minimal change in the doping level has greatly influenced the electric field distribution. c Photocurrent and dark current with different doping level (thickness of charge layer is 50 nm). Solid line: doping level in charge layer is 5.7 × 10¹⁷ cm⁻³. Dashed line: doping level in charge layer is 4.8 × 10¹⁷ cm⁻³. Dashed dot line: doping level in charge layer is 3.9 × 10¹⁷ cm⁻³. c Presents the simulation results of currents with different doping level. The device with a charge layer thickness of 50 nm has a relatively wide and suitable doping level. A minimal change in the doping level has a small influence on the current-voltage characteristic. d Avalanche field with different doping level (thickness of charge layer is 50 nm). Solid line: doping level in charge layer is 5.7 × 10¹⁷ cm⁻³. Dashed line: doping level in charge layer is 4.8 × 10¹⁷ cm⁻³. Dashed dot line: doping level in charge layer is 3.9 × 10¹⁷ cm⁻³. d Presents the simulation results of fields with different doping level. The device with a charge layer thickness of 50 nm only has a relatively wide and suitable doping level. A minimal change in the doping level has a small influence on the electric field distribution