Fig. 11

a Avalanche breakdown electric field with different multiplication thicknesses. Solid line: w _m  = 100 nm. Dashed line: w _m  = 200 nm. Dashed dot line: w _m  = 300 nm. a Presents the simulation results of electric field distribution with different w _m . As the w _m decreases, the avalanche field in the multiplication increase. b Relationship between multiplication thickness and charge layer. The thickness of multiplication is 300 nm (black square), 200 nm (black circle), 100 nm (black triangle). b Presents the relationship between multiplication thickness and charge layer. A thin multiplication layer needs a high product of the charge layer doping level and thickness to reduce the high avalanche field