Fig. 2

Comparison of theoretical results and experiment data from various reports (w _m  = 200 nm). Closed symbols: the doping level and thickness of charge layer with multiplication thickness of 200 nm (black square, black circle, black triangle, black right-pointing triangle) and 231 nm (black diamond, black down-pointing triangle) in the references. Presents the calculated values of charge layer (doping level and thickness) by Formula 8 (the absorption field is 50–180 kV/cm). When the absorption field is 50 kV/cm, the upper limit of the doping level in the charge layer can be obtained. When the absorption field is 180 kV/cm, the lower limit of the doping level in the charge layer can be obtained. We compare the theoretical results and experiment data from various reports. The region of theoretical values is in good agreement with the experimental data. Dashed lines the calculated values of doping level and thickness by the formula