Account

Table 2 The on-current shift, off-current shift, and subthreshold voltage swing variance values of CL-ES-structured device and BCE-structured device

From: Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers

BL	T	Bias time	CL-ES				BCE
			V_g bias − 30 V				V_g bias − 30 V
			I_on (uA)	I_off (pA)	V_th (V)	SS (V/dec)	I_on (uA)	I_off (pA)	V_th (V)	SS (V/dec)
0nit	RT	0 s	7.50	0.01	− 0.71	0.50	8.79	0.21	2.34	1.69
5000nit	60 °C	1000 s	7.92	0.12	− 1.06	0.50	11.83	0.57	0.02	1.85
5000nit	60 °C	3600 s	6.99	0.10	− 1.22	0.83	15.99	6.59	− 1.54	2.11
Shift (1 h–0 h)			− 0.51	0.09	− 0.51	0.33	7.20	6.38	− 3.88	0.42

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