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Table 2 The on-current shift, off-current shift, and subthreshold voltage swing variance values of CL-ES-structured device and BCE-structured device

From: Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers

BL T Bias time CL-ES BCE
Vg bias − 30 V Vg bias − 30 V
Ion (uA) Ioff (pA) Vth (V) SS (V/dec) Ion (uA) Ioff (pA) Vth (V) SS (V/dec)
0nit RT 0 s 7.50 0.01 − 0.71 0.50 8.79 0.21 2.34 1.69
5000nit 60 °C 1000 s 7.92 0.12 − 1.06 0.50 11.83 0.57 0.02 1.85
5000nit 60 °C 3600 s 6.99 0.10 − 1.22 0.83 15.99 6.59 − 1.54 2.11
Shift (1 h–0 h) − 0.51 0.09 − 0.51 0.33 7.20 6.38 − 3.88 0.42