Fig. 1From: Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substratea Lattice mismatch between Ge0.65-xbSi0.35Sn xb and Ge (filled circles) and between Ge0.72Sn0.28 and Ge0.65-xbSi0.35Sn xb (filled squares) as a function of xb. b Band edges at L and G valleys for Ge0.65-xbSi0.35Sn xb , Ge0.72Sn0.28, and Ge as a function of x b Back to article page