Fig. 5From: Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si SubstrateRoom temperature ground state emission wavelength from direct bandgap Ge0.72Sn0.28 QD as a function of size and Sn composition of the Ge0.65-xbSi0.35Sn xb surrounding layerBack to article page