From: Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate
b GeSn
b GeSi
b SiSn
Γ (eV)
2.92 [31]
0.21 [32]
13.2 [33]
L (eV)
0.87 [31]
0.335 [32]
2.124 [32]
