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Table 1 Binary alloy’s bandgap bowing parameters in eV

From: Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate

  b GeSn b GeSi b SiSn
Γ (eV) 2.92 [31] 0.21 [32] 13.2 [33]
L (eV) 0.87 [31] 0.335 [32] 2.124 [32]