Table 1 The average turn-on voltage and light output intensity for selected chips from different position of InGaN/GaN LED wafers with the optimal PS NS arrangement (PS NS diameter of 100 nm and period of 100 nm) on an ITO window layer under a 20-mA driving current

From: Preparation of a Periodic Polystyrene Nanosphere Array Using the Dip-Drop Method with Post-deposition Etching and Its Application of Improving Light Extraction Efficiency of InGaN/GaN LEDs