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Table 1 The average turn-on voltage and light output intensity for selected chips from different position of InGaN/GaN LED wafers with the optimal PS NS arrangement (PS NS diameter of 100 nm and period of 100 nm) on an ITO window layer under a 20-mA driving current

From: Preparation of a Periodic Polystyrene Nanosphere Array Using the Dip-Drop Method with Post-deposition Etching and Its Application of Improving Light Extraction Efficiency of InGaN/GaN LEDs

Chip no. Turn-on voltage (V) at 20 mA Light output intensity (mcd) at 20 mA
1 3.65 155.9
2 3.65 154.3
3 3.66 153.1
4 3.65 151.8
5 3.72 156.4
6 3.71 154.2
7 3.67 152.4
8 3.68 154.7
9 3.67 153.3
10 3.68 156.1