Fig. 4From: The Fabrication of Large-Area, Uniform Graphene Nanomeshes for High-Speed, Room-Temperature Direct Terahertz DetectionTransfer characteristics (Ids − Vg) of the devices based on a c-GNM and b r-GNM with different widths at Vds = 2 V. The VTh (the conduction voltage value minus the voltage value of neutral point) of the 30-nm device is about 15 V. c Conductivity versus the neck width for r-GNM (black) and c-GNM (red)Back to article page