Fig. 2From: Raman Spectroscopy of Multi-Layer Graphene epitaxially Grown on 4H-SiC by Joule Heat Decompositiona Optical image of MLG sample which was prepared at 3.24 A for 5 min and characterized from the center. b Raman mapping for the intensity of 2D band from the marked area in dashed square in a. c The Raman spectra from the marked circles in b. d Raman mapping for the FWHM of 2D bandBack to article page