Fig. 4From: Raman Spectroscopy of Multi-Layer Graphene epitaxially Grown on 4H-SiC by Joule Heat Decompositiona The IV properties of the Au-graphene-Au contact. The inset is the schematic diagram of LTLM. b The linear fit of the total contact resistance of Au ohmic contact as a function of contact pads distance from 5 to 20 μmBack to article page