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Fig. 1 | Nanoscale Research Letters

Fig. 1

From: Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy

Fig. 1

HRXRD 004 2θ-ω scan of a MWIR b and LWIR InAs/GaSb T2SLs. Experimental (black line) and simulated (red line) HRXRD 2θ-ω scans for the (004) reflection of a MWIR T2SL; there are well-resolved satellites with an order up to 4, which is a characteristic of good quality of superlattice. The FWHM of the zeroth-order peak is 107 arcsec, b and LWIR InAs/GaSb T2SLs; there are satellite peaks with an order up to 7, which confirms the high crystalline quality. The FWHM of the zeroth-order peak is 99 arcsec. The period of each superlattice is calculated from the distance between adjacent satellites

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