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Fig. 3 | Nanoscale Research Letters

Fig. 3

From: Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy

Fig. 3

a Hall concentration and b Hall mobility of MWIR InAs/GaSb T2SL grown at different temperatures. The electrical parameters of the MWIR InAs/GaSb T2SLs grown at different temperatures. a Hall concentration: the three T2SLs exhibit a change of conductivity. They are p-type at low temperatures and n-type at high temperatures. b Hall mobility: there are two regions for the mobility tendency. For low temperature, the mobility decreases due to the different scattering mechanisms. For high temperatures, the mobility increases by increasing the temperature, which can be explained by the ionized traps in InSb-like interface. The temperature at which the conductivity change occurs increases when the growth temperature increases, which is due to the high defect levels at higher temperatures

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