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Fig. 4 | Nanoscale Research Letters

Fig. 4

From: Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy

Fig. 4

Hall resistivity of the MWIR InAs/GaSb T2SL grown at a 330 °C, b 390 °C, and c 400 °C. The Hall resistivity of the MWIR InAs/GaSb T2SL deposited at different growth temperatures, a 330 °C, b 390 °C, and c 400 °C. For each graph, there are two well-defined slopes. From the Arrhenius law, two thermal energies can be extracted, which confirms the existence of two impurity levels. One represents the n-type carriers, and the second one corresponds to the p-type carriers. The deep impurity level associated to the n-type carriers is the result of the band lineup between InAs and InAs/GaSb T2SL

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