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Fig. 5 | Nanoscale Research Letters

Fig. 5

From: Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy

Fig. 5

a Hall concentration, Hall mobility, and b Hall resistivity of unintentionally doped LWIR InAs/GaSb T2SL. The transport properties of the LWIR InAs/GaSb T2SL. a Hall concentration and mobility: this superlattice exhibits only n-type conduction for the whole temperature range. The Hall concentration increases by increasing the temperature which is caused by the ionization effects. On the other hand, the Hall mobility behavior is governed by the different scattering mechanisms (phonons and ionized impurities) for temperatures higher than 95 K. For temperatures below 95 K, the mobility is constant (as well as the Hall concentration), which confirms the existence of another scattering mechanism which is temperature-independent. This latter is the interface roughness mechanism. b Hall resistivity: from the Arrhenius law, there is only one thermal energy associated to one impurity level

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