Table 1 Simulation parameter for imitating the behavior of trap-assisted tunneling and Vo- generation process of forming operation
From: A Study of the Variability in Contact Resistive Random Access Memory by Stochastic Vacancy Model
Parameter | Illustration | Value |
---|---|---|
R ij | Localized resistance of Vo- site | |
V ij | Potential | |
R oxide | Localized resistance of oxide site | |
N | Iteration time | |
E | Electric field | |
ϕ | Electric potential difference | |
d | Tunneling distance | |
C Vo- | Vo- concentration | |
R ini | Initial resistance state | |
P ij | Probability of Vo- generation | |
P g | Threshold switching probability | |
R forming | Resistance after forming operation | |
V f | Forming voltage | |
α | Fitting parameter | 1660 |
β | Fitting parameter | 1.3 |
γ | Fitting parameter |