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Table 1 Simulation parameter for imitating the behavior of trap-assisted tunneling and Vo- generation process of forming operation

From: A Study of the Variability in Contact Resistive Random Access Memory by Stochastic Vacancy Model

Parameter

Illustration

Value

R ij

Localized resistance of Vo- site

 

V ij

Potential

 

R oxide

Localized resistance of oxide site

18 MΩ [34, 35]

N

Iteration time

 

E

Electric field

 

ϕ

Electric potential difference

 

d

Tunneling distance

 

C Vo-

Vo- concentration

 

R ini

Initial resistance state

 

P ij

Probability of Vo- generation

 

P g

Threshold switching probability

 

R forming

Resistance after forming operation

 

V f

Forming voltage

 

α

Fitting parameter

1660

β

Fitting parameter

1.3

γ

Fitting parameter

 

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