From: A Study of the Variability in Contact Resistive Random Access Memory by Stochastic Vacancy Model

Parameter | Illustration | Value |
---|---|---|

R
_{ij}
| Localized resistance of Vo- site | |

V
_{ij}
| Potential | |

R
_{oxide}
| Localized resistance of oxide site | 18 MΩ [34, 35] |

N
| Iteration time | |

E
| Electric field | |

ϕ
| Electric potential difference | |

d
| Tunneling distance | |

C
_{Vo-}
| Vo- concentration | |

R
_{ini}
| Initial resistance state | |

P
_{ij}
| Probability of Vo- generation | |

P
_{g}
| Threshold switching probability | |

R
_{forming}
| Resistance after forming operation | |

V
_{f}
| Forming voltage | |

α
| Fitting parameter | 1660 |

β
| Fitting parameter | 1.3 |

γ
| Fitting parameter |