Fig. 5From: Perpendicular Magnetic Anisotropy and Hydrogenation-Induced Magnetic Change of Ta/Pd/CoFeMnSi/MgO/Pd MultilayersThe dependence of the Hall resistivity on time under H2 absorption and desorption for Ta/Pd/CFMS (2.3 nm)/MgO (1.3 nm)/Pd films annealed at 300 °CBack to article page