Fig. 3
From: Effects of Etching Variations on Ge/Si Channel Formation and Device Performance
C-V characteristics of the TiN/ZrO2/Ge MISCAPs with EOT ~ 0.6 nm
Fig. 3 | Nanoscale Research Letters
From: Effects of Etching Variations on Ge/Si Channel Formation and Device Performance
C-V characteristics of the TiN/ZrO2/Ge MISCAPs with EOT ~ 0.6 nm
