Fig. 3
From: Effects of Etching Variations on Ge/Si Channel Formation and Device Performance
C-V characteristics of the TiN/ZrO2/Ge MISCAPs with EOT ~ 0.6 nm
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Fig. 3 | Nanoscale Research Letters
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From: Effects of Etching Variations on Ge/Si Channel Formation and Device Performance
C-V characteristics of the TiN/ZrO2/Ge MISCAPs with EOT ~ 0.6 nm
