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Fig. 8 | Nanoscale Research Letters

Fig. 8

From: Effects of Etching Variations on Ge/Si Channel Formation and Device Performance

Fig. 8

Schematic of the device fabrication. a Fin patterning. The starting materials is Ge (130 nm) on BOX. b Anisotropic etching and photoresist striping. c Gate formation by atomic layer deposition of ZrO2 and TiN deposition. d Self-aligned boron implantation on S/D for good contact. Note: the left side is the 3D schematics and the right side is the corresponding cross sectional view

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