Fig. 3From: A Convenient and Effective Method to Deposit Low-Defect-Density nc-Si:H Thin Film by PECVDAFM images of nc-Si:H thin films showing a surface morphology change by different deposition pressures. a 150 Pa, b 300 Pa, c 450 Pa, d 600 Pa, e 750 Pa, f 900 Pa, and g 1050 Pa. The craters in a and b are marked by dashed circles, and root mean square (RMS) roughness of film surfaces under different deposition pressures marked as hBack to article page