Fig. 6From: Reduced Contact Resistance Between Metal and n-Ge by Insertion of ZnO with Argon Plasma Treatmenta J-V characteristics for Al/n−-Ge control, Al/ZnO/n−-Ge with ZnO thicknesses of 1 nm, 2 nm, and 3 nm, and Al/2 nm Ar plasma-treated ZnO/Ge, b J-V characteristics for three Al/2 nm Ar plasma-treated ZnO/Ge devicesBack to article page