Fig. 1From: Carrier Transport Properties of MoS2 Asymmetric Gas Sensor Under Charge Transfer-Based Barrier Modulationa Schematic diagram of the MoS2 Schottky diodes with Al and Pt contacts. b AFM image of the MoS2 Schottky diode device with asymmetric metal electrodes (Al/Pt). c Cross-sectional analysis of the device for measuring the thickness of MoS2 layer. d Surface potential image of the same device. e Normalized distribution of the relative surface potentials of MoS2, Al, and PtBack to article page