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Nanoscale Research Letters
Fig. 1 | Nanoscale Research Letters

Fig. 1

From: Carrier Transport Properties of MoS2 Asymmetric Gas Sensor Under Charge Transfer-Based Barrier Modulation

Fig. 1

a Schematic diagram of the MoS2 Schottky diodes with Al and Pt contacts. b AFM image of the MoS2 Schottky diode device with asymmetric metal electrodes (Al/Pt). c Cross-sectional analysis of the device for measuring the thickness of MoS2 layer. d Surface potential image of the same device. e Normalized distribution of the relative surface potentials of MoS2, Al, and Pt

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