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Fig. 4 | Nanoscale Research Letters

Fig. 4

From: Excellent Light Confinement of Hemiellipsoid- and Inverted Hemiellipsoid-Modified Semiconductor Nanowire Arrays

Fig. 4

Spatial distribution of the photo-generated carrier generation rate at AM 1.5G illumination for the arrays (H = 2000 nm and D = 500 nm) top-modified by (left) hemiellipsoids (h = 500 nm) and (middle) inverted hemiellipsoids (h = 500 nm). The generation rate (right) in the pure NW array of H = 2000 nm and D = 500 nm is presented for comparison

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