Fig. 5From: Excellent Light Confinement of Hemiellipsoid- and Inverted Hemiellipsoid-Modified Semiconductor Nanowire ArraysAbsorption spectra of the a hemiellipsoid- and b inverted hemiellipsoid-modified GaAs NW arrays (H = 2000 nm, D = 500 nm, and h = 500 nm) at the incident angle (α) of 0, 30, and 60°. The inset tables summarize the theoretical photocurrent density (Jph) for these two top-modified NW arrays at the corresponding incident angles, respectivelyBack to article page