Fig. 2From: Dual Functions of V/SiOx/AlOy/p++Si Device as Selector and MemoryUnidirectional threshold switching of V/SiOx/AlOy/p++Si when a positive forming with CCL of 1 μA is applied. a Typical I–V curves. b Schematic drawing of forming process. c I–V characteristics by temperature dependence. d Transient characteristicsBack to article page