Fig. 1From: Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon SubstratesStructures of the MQW LED samples grown on Si substrates. S1, S3, and S4 contain 1 μm Si uniformly doped n-type GaN layer. S3 contains 20 nm InGaN inserted layer. S4 contains 20 nm AlGaN inserted layer. S2 contains 20 periods of Si-δ-doped planes each followed by 50 nm nominally undoped GaN with a total thickness of 1 μm instead of Si uniformly doped n-type GaN layerBack to article page