Fig. 5From: Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substratesa Relative PL efficiencies vs. temperature for S1–S4. The detected wavelength is kept at each peak position according to SSPL results in Fig. 2. b Total recombination rate, radiative recombination rate, and nonradiative recombination rate vs. temperature for S1Back to article page