High-Performance Ultraviolet Photodetector Based on Graphene Quantum Dots Decorated ZnO Nanorods/GaN Film Isotype Heterojunctions

Table 1 Comparison of the characteristic parameters of the isotype heterojunction UV photodetector

Material	Substrate	Bias (V)	Wavelength (nm)	Rise time (s)	Decay time (s)	References
ZnO film/GQDs	Glass	0	UV	2.6	6.31	[26]
ZnO nanorods/CdS	GaN	0	254	< 0.35	< 0.35	[44]
ZnO nanorods	GaN	1	360	0.28	0.32	[45]
ZnO nanorods/GQDs	FTO	2	365	2.14	0.91	[46]
ZnO nanorods/ZnO film	GaN	− 4	362	< 1	< 1	[47]
ZnO nanorods arrays	GaN	10	365	0.26	0.25	This work
ZnO nanorods arrays/GQDs	GaN	10	365	0.1	0.12	This work